1/f noise in MgO double-barrier magnetic tunnel junctions

Shot noise in magnetic double-barrier tunnel junctions

T. Szczepański, V. K. Dugaev, 2 J. Barnaś∗,3 J. P. Cascales, and F. G. Aliev Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland Department of Physics and CFIF, Instituto Superior Técnico, TU Lisbon, Av. Rovisco Pais, 1049-001 Lisbon, Portugal Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Pol...

Controlling shot noise in double-barrier magnetic tunnel junctions.

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0...

Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes: Influence of annealing temperature

Low frequency noise has been measured in magnetic tunnel junctions with MgO barriers and magnetoresistance values up to 235%. The authors investigated the noise for different degrees of crystallization and CoFeB/MgO interface quality depending on the annealing temperature. The authors report an extremely low 1/ f noise, compared to magnetic junctions with Al2O3 barriers. The origin of the low f...

MgO-based double barrier magnetic tunnel junctions with thin free layers

The free layer thickness tfree in double barrier magnetic tunnel junctions DMTJs based on crystalline MgO barriers and CoFeB ferromagnetic layers has been varied from 0.5 to 3.0 nm in order to investigate its effect on the magnetic and electrical properties. One obvious feature of DMTJs with tfree 1 nm is the absence of sharp free layer switching in the TMR curves, which can be explained by the...

Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer